| 摘要 |
PROBLEM TO BE SOLVED: To make clear a standard related to the lowering degree of energy in a situation that oxygen primary ions are irradiated with low energy to reduce the effect of a transient region in secondary ion mass analysis in a concentration analyzing method of an impure element in a depth direction. SOLUTION: When the depth direction of a very small amount of an element contained in the vicinity of the surface of an Si substrate is analyzed using a secondary ion mass analyzing method, oxygen is used as primary ions and, in the irradiation condition of primary ions, energy is set to 0.15 keV or above being an apparatus limit and set to 0.50 keV or below being a conventional method and the incident angle θ of the primary ions is selected corresponding to each energy. COPYRIGHT: (C)2008,JPO&INPIT |
