发明名称 PRODUCTION METHOD FOR HIGH PURITY COPPER POWDER USING A THERMAL PLASMA
摘要 Disclosed is a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, a penetrator liner, or the like. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes passing a Cu powder having an average particle diameter of 30 to 450 µ m through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr, to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 µ m.
申请公布号 EP2511032(A1) 申请公布日期 2012.10.17
申请号 EP20100836122 申请日期 2010.07.20
申请人 POONGSAN CORPORATION 发明人 KIM, DAE HYUN;LEE, DONG WOO;KIM, IN DAL;CHOI, SANG YOUNG;LEE, JI HOON;JEON, BO MIN
分类号 B22F9/14;B22F1/00;B22F9/04;C22B9/22 主分类号 B22F9/14
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