PURPOSE: A semiconductor substrate and a semiconductor package are provided to implement high frequency system with high integration by using SIW(Substrate Integrated Waveguide) and embedded IC interconnection technology. CONSTITUTION: A cavity is formed on a silicon substrate(100). A first metal layer(103) is formed on the lower side of the cavity by electroplating. Organic materials(105) are filled in the cavity by a lamination process. A second metal layer(107) is formed in the cavity with the organic materials by electroplating. A plurality of via holes(109) are formed between the first metal layer and the second metal layer.
申请公布号
KR20120113815(A)
申请公布日期
2012.10.16
申请号
KR20110028341
申请日期
2011.03.29
申请人
KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人
PARK, JONG CHUL;KIM, JUN CHUL;KIM, DONG SU;YOOK, JONG MIN