摘要 |
An apparatus and method for operating an array of NOR connected flash nonvolatile memory cells erases the array in increments of a page, block, sector, or the entire array while minimizing sub-threshold leakage current through unselected nonvolatile memory cells. The apparatus has a row decoder circuit and a source decoder circuit for selecting the nonvolatile memory cells for providing biasing conditions for reading, programming, verifying, and erasing the selected nonvolatile memory cells while minimizing sub-threshold leakage current through unselected nonvolatile memory cells. |