发明名称 |
Semiconductor device, method of manufacturing the same, and electronic device having the same |
摘要 |
A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen. |
申请公布号 |
US8288831(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20110984623 |
申请日期 |
2011.01.05 |
申请人 |
NODA TAKESHI;KITAKADO HIDEHITO;MATSUO TAKUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NODA TAKESHI;KITAKADO HIDEHITO;MATSUO TAKUYA |
分类号 |
H01L29/76;H01L21/336;H01L29/423;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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