发明名称 |
Tunnel field effect devices |
摘要 |
An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state. |
申请公布号 |
US8288803(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20090550857 |
申请日期 |
2009.08.31 |
申请人 |
BJOERK MIKAEL T.;KARG SIEGFRIED F.;KNOCH JOACHIM;RIEL HEIKE E.;RIESS WALTER H.;SOLOMON PAUL M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BJOERK MIKAEL T.;KARG SIEGFRIED F.;KNOCH JOACHIM;RIEL HEIKE E.;RIESS WALTER H.;SOLOMON PAUL M. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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