发明名称 |
Manufacturing method of semiconductor device and semiconductor device produced therewith |
摘要 |
A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film. |
申请公布号 |
US8288295(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20050661705 |
申请日期 |
2005.09.01 |
申请人 |
OKU YOSHIAKI;FUJII NOBUTOSHI;KOHMURA KAZUO;ROHM CO., LTD.;ULVAC |
发明人 |
OKU YOSHIAKI;FUJII NOBUTOSHI;KOHMURA KAZUO |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|