| 摘要 |
When an error correction code (ECC) unit finds uncorrectable errors in a solid state non-volatile memory device, a process may be used in an attempt to locate and correct the errors. This process may first identify low confidence memory cells that are likely to contain errors, and then determine what data is more likely to be correct in those cells, based on various criteria. The new data may then be checked with the ECC unit to verify that it is sufficiently correct for the ECC unit to correct any remaining errors. |
