发明名称 Dark field detector for use in an electron microscope
摘要 The invention relates to a dark-field detector for an electron microscope. The detector comprises a photodiode for detecting the scattered electrons, with an inner electrode and an outer electrode. As a result of the resistive behavior of the surface layer the current induced by a scattered electron, e.g. holes, are divided over the electrodes, so that a current I1 and I2 is induced, the sum of the current proportional to the energy of the impinging electron and the normalized ratio a function of the radial position where the electron impinges.
申请公布号 US8288724(B2) 申请公布日期 2012.10.16
申请号 US20090630687 申请日期 2009.12.03
申请人 KOOIJMAN CORNELIS SANDER;VAN VEEN GERARDUS NICOLAAS ANNE;SLUIJTERMAN ALBERTUS AEMILLIUS SEYNO;FEI COMPANY 发明人 KOOIJMAN CORNELIS SANDER;VAN VEEN GERARDUS NICOLAAS ANNE;SLUIJTERMAN ALBERTUS AEMILLIUS SEYNO
分类号 G01N23/207;G01N23/00;G01N23/20 主分类号 G01N23/207
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