发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser. |
申请公布号 |
US8286344(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20080200218 |
申请日期 |
2008.08.28 |
申请人 |
SAKAMOTO MANABU;SHIRAZU TETSUYA;IDANI NAOKI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
SAKAMOTO MANABU;SHIRAZU TETSUYA;IDANI NAOKI |
分类号 |
H05K3/02;B24B37/00;B24B53/017;H01L21/304 |
主分类号 |
H05K3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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