发明名称 |
Method and system for exposure of a phase shift mask |
摘要 |
The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure. |
申请公布号 |
US8288081(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20070695186 |
申请日期 |
2007.04.02 |
申请人 |
CHEN CHIH-MING;TSENG YA-PING;HO MING-TAO;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIH-MING;TSENG YA-PING;HO MING-TAO |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|