发明名称 Data reading method and control circuit and memory controller using the same
摘要 A data reading method for a flash memory module is provided. The method includes applying a bit-data-read voltage to get read data from memory cells of the flash memory module. The method also includes setting a minus-adjustment-bit-data-read voltage and a plus-adjustment-bit-data-read voltage corresponding to the bit-data-read voltage based on an error-distribution estimated value and applying the minus-adjustment-bit-data-read voltage and the plus-adjustment-bit-data-read voltage to obtain soft values corresponding to the read data from the memory cells. The method further includes calculating a soft-information estimated value corresponding to each bit of the read data according to the soft-values. Accordingly, the method can effectively obtain soft information.
申请公布号 US8289771(B2) 申请公布日期 2012.10.16
申请号 US20100861089 申请日期 2010.08.23
申请人 TSENG CHIEN-FU;LAI KUO-HSIN;PHISON ELECTRONICS CORP. 发明人 TSENG CHIEN-FU;LAI KUO-HSIN
分类号 G11C11/34;G11C16/06 主分类号 G11C11/34
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