发明名称 |
Semiconductor devices including a layer of polycrystalline silicon having a smooth morphology |
摘要 |
A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are provided. The method comprises the steps of: providing a layer of silicon dioxide; implanting hydrogen ions into the layer of silicon dioxide by plasma source ion implantation; and forming a layer of polycrystalline silicon on the layer of silicon dioxide. |
申请公布号 |
US8288832(B1) |
申请公布日期 |
2012.10.16 |
申请号 |
US20000605293 |
申请日期 |
2000.06.28 |
申请人 |
CHAPEK DAVID L.;MICRON TECHNOLOGY, INC. |
发明人 |
CHAPEK DAVID L. |
分类号 |
H01L21/02;H01L21/28;H01L21/30;H01L21/3115;H01L21/3205;H01L21/336 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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