发明名称 |
Non-volatile memory (NVM) erase operation with brownout recovery technique |
摘要 |
A method for erasing a non-volatile memory includes: performing a first pre-erase program step on the non-volatile memory; determining that the non-volatile memory failed to program correctly during the first pre-erase program step; performing a first soft program step on the non-volatile memory in response to determining that the non-volatile memory failed to program correctly; determining that the non-volatile memory soft programmed correctly; performing a second pre-erase program step on the non-volatile memory in response to determining that the non-volatile memory soft programmed correctly during the first soft program step; and performing an erase step on the non-volatile memory. The method may be performed using a non-volatile memory controller. |
申请公布号 |
US8289773(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20100942260 |
申请日期 |
2010.11.09 |
申请人 |
EGUCHI RICHARD K.;CHOY JON S.;GLAESER RICHARD K.;HE CHEN;KUHN PETER J.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
EGUCHI RICHARD K.;CHOY JON S.;GLAESER RICHARD K.;HE CHEN;KUHN PETER J. |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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