发明名称 |
Non-volatile memory cell with programmable unipolar switching element |
摘要 |
A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element. |
申请公布号 |
US8289751(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US201113117849 |
申请日期 |
2011.05.27 |
申请人 |
TIAN WEI;AMIN NURUL;JIN INSIK;SUN MING;VAITHYANATHAN VENU;KIM YOUNGPIL;JUNG CHULMIN;SEAGATE TECHNOLOGY LLC |
发明人 |
TIAN WEI;AMIN NURUL;JIN INSIK;SUN MING;VAITHYANATHAN VENU;KIM YOUNGPIL;JUNG CHULMIN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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地址 |
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