发明名称 |
Non-volatile memory device and method of operating the same |
摘要 |
Provided is a non-volatile memory device that may include a plurality of variable resistors, each of the variable resistors having first and second terminals, the plurality of variable resistors arranged as a first layer of a plurality of layers and having data storage capability, at least one common bit plane arranged as a second layer of the plurality of layers and coupled to the first terminal of each of the variable resistors of the first layer, and a plurality of bit lines coupled to the second terminal of each of the variable resistors of the first layer. |
申请公布号 |
US8289747(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20090385390 |
申请日期 |
2009.04.07 |
申请人 |
LEE MYOUNGJAE;YOO INKYEONG;PARK YOUNGSOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MYOUNGJAE;YOO INKYEONG;PARK YOUNGSOO |
分类号 |
G11C11/00;G11C7/00;G11C11/34 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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