| 摘要 |
Disclosed are an etching method and an etching apparatus, wherein, while suppressing or eliminating etching of the first surface (for instance, the main surface) of a substrate, such as a glass substrate, which includes a silicon-containing material and is to be treated, the second surface on the rear side is etched. The substrate to be treated (9) is disposed in the treatment atmosphere containing hydrogen fluoride and water. An adjusting means, including a heater (21), performs adjustment such that the temperature of the first surface (9a) of the substrate to be processed (9) is higher than the condensation points of the hydrogen fluoride and the water in the treatment atmosphere and that the temperature of the second surface (9b) is at such condensation points or below. |
