METHOD FOR FABRICATING FEW-LAYERED GRAPHENE OXIDE-BASED REDUCED GRAPHENE OXIDE FIELD EFFECT TANSISTOR BASED ON BOTTOM CONTACTS,申请号KR20110007980-传众专利搜索

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发明名称	METHOD FOR FABRICATING FEW-LAYERED GRAPHENE OXIDE-BASED REDUCED GRAPHENE OXIDE FIELD EFFECT TANSISTOR BASED ON BOTTOM CONTACTS
摘要
申请公布号	KR101190219(B1)	申请公布日期	2012.10.16
申请号	KR20110007980	申请日期	2011.01.26
申请人		发明人
分类号	H01L21/335;H01L29/778	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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