发明名称 Semiconductor device having semiconductor elements formed inside a resin film substrate
摘要 A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided. A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor.
申请公布号 US8288778(B2) 申请公布日期 2012.10.16
申请号 US20080672127 申请日期 2008.08.06
申请人 NAKATANI SEIICHI;YAMASHITA YOSHIHISA;KITAE TAKASHI;SAWADA SUSUMU;PANASONIC CORPORATION 发明人 NAKATANI SEIICHI;YAMASHITA YOSHIHISA;KITAE TAKASHI;SAWADA SUSUMU
分类号 H01L51/52 主分类号 H01L51/52
代理机构 代理人
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