发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A recess along a sidewall is formed in a pMOS region and an nMOS region. An SiC layer of which thickness is thicker than a depth of the recess is formed in the recess. A sidewall covering a part of the SiC layer is formed at both lateral sides of a gate electrode in the pMOS region. A recess is formed by selectively removing the SiC layer in the pMOS region. A side surface of the recess at the gate insulating film side is inclined so that the upper region of the side surface, the closer to the gate insulating film in a lateral direction at a region lower than the surface of the silicon substrate. An SiGe layer is formed in the recess in the pMOS region. |
申请公布号 |
US8288757(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20100893664 |
申请日期 |
2010.09.29 |
申请人 |
OHTA HIROYUKI;SHIMAMUNE YOSUKE;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OHTA HIROYUKI;SHIMAMUNE YOSUKE |
分类号 |
H01L29/06;H01L31/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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