发明名称 QUANTUM WELL STRUCTURE OF USING ENERGY BAND CONTROLLED AND METHOD OF FORMING THE SAME
摘要 PURPOSE: A quantum well structure with a controlled energy band and a forming method thereof are provided to implement different band gaps in a well layer of a single structure. CONSTITUTION: A first barrier(110) is formed on a substrate(100). A well layer(120) is formed on the first barrier layer and includes a first region(121) and a second region(123) with different band gaps. A second barrier layer(130) is formed on the well layer. A dielectric thin film layer(140) is formed on the second barrier layer.
申请公布号 KR20120113586(A) 申请公布日期 2012.10.15
申请号 KR20110031363 申请日期 2011.04.05
申请人 GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, HONG SEOK
分类号 H01L33/04;H01L33/06 主分类号 H01L33/04
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