发明名称 |
QUANTUM WELL STRUCTURE OF USING ENERGY BAND CONTROLLED AND METHOD OF FORMING THE SAME |
摘要 |
PURPOSE: A quantum well structure with a controlled energy band and a forming method thereof are provided to implement different band gaps in a well layer of a single structure. CONSTITUTION: A first barrier(110) is formed on a substrate(100). A well layer(120) is formed on the first barrier layer and includes a first region(121) and a second region(123) with different band gaps. A second barrier layer(130) is formed on the well layer. A dielectric thin film layer(140) is formed on the second barrier layer.
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申请公布号 |
KR20120113586(A) |
申请公布日期 |
2012.10.15 |
申请号 |
KR20110031363 |
申请日期 |
2011.04.05 |
申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE, HONG SEOK |
分类号 |
H01L33/04;H01L33/06 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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