NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve a threshold voltage distribution of memory cells by controlling the applying time of a program voltage. CONSTITUTION: A plurality of cell strings respectively include a ground selection transistor, a plurality of memory cells, and a string selection transistor. A command and an address are received(S110). Voltage applying time is determined in response to the received command and address(S120). A specific voltage is applied to memory cells of the cell strings corresponding to the received address for the determined voltage applying time(S130).