发明名称 LASER PROCESSING METHOD AND SEMICONDUCTOR CHIP
摘要 <p>A LASER PROCESSING- METHOD IS PROVIDED, WHICH, EVEN WHEN A SUBSTRATE (4) FORMED WITH A LAMINATE PART (16) INCLUDING A PLURALITY OF FUNCTIONAL DEVICES (15) IS THICK, CAN CUT THE SUBSTRATE (4) AND LAMINATE PART (16) WITH A HIGH PRECISION. THIS LASER PROCESSING METHOD IRRADIATES A SUBSTRATE (4) WITH LASER LIGHT (L) WHILE USING A REAR FACE (21) AS A LASER LIGHT ENTRANCE SURFACE AND LOCATING A LIGHT-CONVERGING POINT (P) WITHIN THE SUBSTRATE (4), SO AS TO FORM MODIFIED REGIONS (71, 72, 73) WITHIN THE SUBSTRATE (4). HERE, THE QUALITY MODIFIED REGION (71) IS FORMED AT A POSITION WHERE THE DISTANCE BETWEEN THE FRONT FACE (3) OF THE SUBSTRATE (4) AND THE END PART OR THE QUALITY MODIFIED REGION (71) ON THE FRONT FACE (3) SIDE IS 5 ?M TO 15 ?M. WHEN THE QUALITY MODIFIED REGION (71) IS FORMED AT SUCH A POSITION, A LAMINATE PART (16) (CONSTITUTED BY INTERLAYER INSULATING FILMS (17A), (17B) HERE) FORMED ON THE FRONT FACE (3) OF THE SUBSTRATE (4) IS ALSO CUT ALONG A LINE TO CUT (5) WITH A HIGH PRECISION TOGETHER WITH THE SUBSTRATE (4).</p>
申请公布号 MY146899(A) 申请公布日期 2012.10.15
申请号 MY2005PI01540 申请日期 2005.03.30
申请人 HAMAMATSU PHOTONICS K.K. 发明人 TAKESHI SAKAMOTO;KENSHI FUKUMITSU
分类号 H01L21/00;B23K26/00;B23K26/40;H01L21/301 主分类号 H01L21/00
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