发明名称 |
SILICONE THROUGH VIA FOR BONDING CHIPS, CHIP AND MOUNTED CHIPS COMPRISING THE SAME, AND METHOD FOR BONDING MOUNTED CHIPS BY ELECTROPLATING |
摘要 |
<p>PURPOSE: A silicon through via for bonding a chip, the chip including the same, a laminated chip, and a method for bonding the laminated chip using an electroplating are provided to improve conductivity and bonding strength by forming a metal bonding part with the electroplating. CONSTITUTION: A metal part(140) fills a silicon through via(170). A metal pad(150) is laminated on the silicon through via. A metal bump(160) is protruded from the chip with a preset height. The metal bump and the metal pad are made of the same metal materials. An insulation layer(120) and a metal seed layer(130) are successively laminated on the silicon through via.</p> |
申请公布号 |
KR20120113401(A) |
申请公布日期 |
2012.10.15 |
申请号 |
KR20110031095 |
申请日期 |
2011.04.05 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY;KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
KIM, SUN RAK;LEE, SEUNG SEOB;KIM, TAEK SOO;PARK, AH YOUNG;LEE, JAE HAK;SONG, JOON YUB |
分类号 |
H01L23/48;H01L23/12 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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