NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT PROPERTIES
摘要
PURPOSE: A nitride based light emitting device with a high luminous property using impurities is provided to improve a luminous property by forming a p-electrode contact layer doped with a p type impurity and an n type impurity on a p type nitride layer. CONSTITUTION: An n type nitride layer(210) is formed on a substrate. An active layer(220) is formed on the n type nitride layer. A p type nitride layer(230) is formed on the active layer. A p-electrode contact layer(240) is formed on the p type nitride layer. The p-electrode contact layer is made of nitride doped with the n type impurity and the p type impurity. [Reference numerals] (240) P-electrode contact : Si, Mg
申请公布号
KR20120113140(A)
申请公布日期
2012.10.12
申请号
KR20110030893
申请日期
2011.04.04
申请人
ILJIN MATERIALS CO., LTD.
发明人
CHOI, WON JIN;PARK, JUNG WON;LIM, SEOK KYU;KIM, JOO WON;LEE, SUNG HAK;KWON, TAE WAN