| 摘要 |
<p>The method involves depositing an aluminum nitride layer (31) on a topology pattern and a top edge of a step corresponding to one of bottom edges (32-1, 34-2) of a side, which is vertical or perpendicular relative to a surface (2') of a substrate (2). A mask layer is formed over the aluminum nitride layer whose edge is positioned so as to define one of top edges (32-2, 34-2) of the side. The aluminum nitride layer is etched via the mask, in order to obtain the side, where slope of the side is defined by a position of the top and bottom edges in a plane perpendicular to the surface. The mask layer is made of silica, or molybdenum, or platinum or an adhesive resin. An independent claim is also included for a heterogeneous substrate comprising a sub layer forming part of a step-type pattern.</p> |
