Method for directly bonding semiconductor structures e.g. carrier substrates used in manufacturing of e.g. transistor, involves subjecting bonded metal structure to thermal budget and annealing bonded metal structure

摘要

The method involves depositing metal (132) over a semiconductor structure (100). Portion of metal deposited over semiconductor structure is removed. Remaining portion of metal is subjected to thermal budget and is annealed. Metal feature of semiconductor structure comprising remaining portion of metal is directly bonded to metal feature of other semiconductor structure (200) to form bonded metal structure. Bonded metal structure is subjected to thermal budget and is annealed. Cap layer is formed at metal feature surface, which comprises metal, silicon and nitrogen.