发明名称 NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EFFICIENCY
摘要 PURPOSE: A nitride based light emitting device with high luminous efficiency using impurities is provided to remove yellow luminescence by mixing impurities with a bottom nitride layer of a light emitting device. CONSTITUTION: A bottom nitride layer(210) is formed on a substrate. A first conductive nitride layer(220) is formed on the upper side of the bottom nitride layer. An active layer(230) is formed on the upper side of the first conductive nitride layer. A second conductive nitride layer(240) is formed on the upper side of the active layer. A first electrode is contacted with the first conductive nitride layer. [Reference numerals] (200) Substrate
申请公布号 KR20120113141(A) 申请公布日期 2012.10.12
申请号 KR20110030894 申请日期 2011.04.04
申请人 ILJIN MATERIALS CO., LTD. 发明人 CHOI, WON JIN;PARK, JUNG WON
分类号 H01L33/32 主分类号 H01L33/32
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