发明名称 |
NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EFFICIENCY |
摘要 |
PURPOSE: A nitride based light emitting device with high luminous efficiency using impurities is provided to remove yellow luminescence by mixing impurities with a bottom nitride layer of a light emitting device. CONSTITUTION: A bottom nitride layer(210) is formed on a substrate. A first conductive nitride layer(220) is formed on the upper side of the bottom nitride layer. An active layer(230) is formed on the upper side of the first conductive nitride layer. A second conductive nitride layer(240) is formed on the upper side of the active layer. A first electrode is contacted with the first conductive nitride layer. [Reference numerals] (200) Substrate
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申请公布号 |
KR20120113141(A) |
申请公布日期 |
2012.10.12 |
申请号 |
KR20110030894 |
申请日期 |
2011.04.04 |
申请人 |
ILJIN MATERIALS CO., LTD. |
发明人 |
CHOI, WON JIN;PARK, JUNG WON |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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