发明名称 |
PROCESSING A WAFER FOR AN ELECTRONIC CIRCUIT |
摘要 |
According to a disclosed embodiment, there is provided a method of processing a silicon wafer for use in a substrate for an electronic circuit, comprising: impregnating the silicon wafer with impurities that form one or more deep energy levels within the band gap of silicon, wherein at least one of said deep energy levels is positioned at least 0.3 eV away from the conduction band if the level is a donor level or at least 0.3 eV away from the valence band if the level is an acceptor level; and pre-processing the silicon wafer, prior to or after said impregnation step, so that precipitation of oxide during, after, or during and after, said impregnating step is suppressed. |
申请公布号 |
WO2012137000(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
WO2012GB50760 |
申请日期 |
2012.04.04 |
申请人 |
ISIS INNOVATION LIMITED;WILSHAW, PETER;MALLIK, KANAD;JORDAN, DOUG |
发明人 |
WILSHAW, PETER;MALLIK, KANAD;JORDAN, DOUG |
分类号 |
H01L21/26;H01L21/265;H01L21/322 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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