THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES

摘要

The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.