发明名称 TEMPERATURE SENSOR
摘要 A temperature sensor includes: a gate voltage generation unit including a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage; and a variable voltage output unit including an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage.
申请公布号 US2012257648(A1) 申请公布日期 2012.10.11
申请号 US201113337210 申请日期 2011.12.26
申请人 JEONG HYUN SIK;KIM SAENG HWAN;HYNIX SEMICONDUCTOR INC. 发明人 JEONG HYUN SIK;KIM SAENG HWAN
分类号 G01K7/00 主分类号 G01K7/00
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