SCHOTTKY DIODE AND PRODUCTION METHOD THEREFOR

摘要

PURPOSE: A schottky diode and a manufacturing method thereof are provided to produce a mechanically strong schottky diode in which switching is rapidly implemented even at a high voltage and current. CONSTITUTION: A schottky diode(2) comprises a first main surface(4), a second main surface(6), and an edge surface(8). A semiconductor base(10) has high dopant concentration. A semiconductor layer(12) has the same conductivity and low dopant concentration. A first metal layer(20) forms a schottky contact(200) with the semiconductor layer. A flat contact(32) is connected to a second metal layer(22) through a layer formed with a connection method(30).