COMPOSITION FOR FORMING RESIST LOWER LAYER FILM AND PROCESS FOR FORMING PATTERN

摘要

PURPOSE: A composition for forming a resist sub-layer film and a process for forming pattern is provided to reduce the amount of out gas in the process of forming a resist sub-layer. CONSTITUTION: A composition for forming a resist sub-layer film includes a solvent and a polymer with a structure unit represented by chemical formula 1. The polystyrene conversion average molecular weight of the polymer is in a range between 3,000 and 10,000. In chemical formula 1, R3 to R8 are respectively groups represented by chemical formula 2, hydrogen atoms, hydroxyl groups, C1 to C6 alkyl groups, C1 to C6 alkoxy groups, C2 to C10 alkoxycarbonyl groups, C6 to C14 aryl groups, or C3 to C6 glycidylether groups; and X is a C1 to C10 alkanediyl group, a C3 to C20 cycloalkanediyl group, a C1 to C10 alkanediyloxy group, a C3 to C20 cycloalkanediyl group, a C6 to C14 arenediyl group, or the divalent combination of the same. A part or whole of hydrogen atoms in the alkyl groups, the alkoxy groups, the alkoxycarbonyl groups, the aryl groups, and the glycidylether groups is substitutable. At least one of R3 to R8 is a group represented by chemical formula 2.