SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit reduction in withstanding voltage of a bottom face of a trench gate due to electric field concentration with maintaining low switching loss.

SOLUTION: A conductive part 44 of a trench gate 40 includes a first conductive part 44a extending along a lateral face of the trench gate 40 and a second conductive part 44b extending along a bottom face of the trench gate 40. The second conductive part 44b protrudes from the first conductive part 44a toward the center of the trench gate 40 when viewed from above, and an end part of the second conductive part 44b does not exceed an intermediate position 43 between a lateral face and the center 41 of the trench gate 40.

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