| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device or a semiconductor device with high readout accuracy. <P>SOLUTION: A semiconductor memory cell includes a bit line, a word line, a memory cell disposed at an intersection between the bit line and the word line, and a readout circuit electrically connected to the bit line. The memory cell includes a first transistor and an anti-fuse. The readout circuit includes a pre-charge circuit, a clocked inverter, and a switch. The pre-charge circuit includes a second transistor and a NAND circuit. As each of a first transistor and a second transistor, a transistor including an oxide semiconductor for a channel formation region is used. <P>COPYRIGHT: (C)2013,JPO&INPIT |
