| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of satisfying both high photoelectric conversion efficiency and high productivity, and a method for manufacturing the same. <P>SOLUTION: A photoelectric conversion device 90 comprises at least of a substrate with a transparent electrode in which a transparent electrode layer 2 is provided on a transparent insulating substrate 1, a photoelectric conversion layer 91 mainly having an amorphous silicon-based semiconductor and a back electrode layer 4. The substrate with the transparent electrode has a surface where lots of large and small recesses and projections are mixed together, and a spectral haze rate of the photoelectric conversion device 90 at wavelength more than 550 nm and less than 800 nm is more than 20%. A different-phase block layer for blocking a differential-phase penetrating from a surface at the transparent electrode layer 2 of the photoelectric conversion layer 91 to a surface at the back electrode layer 4, is provided in the photoelectric conversion layer 91, or a different-phase prevention layer for preventing a generation of the different-phase penetrating from the surface at the transparent electrode layer 2 of the photoelectric conversion layer 91 to the surface at the back electrode layer 4 of the photoelectric conversion layer 91 is provided between the transparent electrode layer 2 and the photoelectric conversion layer 91. <P>COPYRIGHT: (C)2013,JPO&INPIT |
