摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a p-type semiconductor region in a self-aligned manner with respect to an n-type semiconductor region. <P>SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises a process of exposing a surface of an n-type semiconductor region and a surface of a semiconductor layer, which have relatively different impurity concentrations from each other. The n-type semiconductor region is formed on a region in adjacent to a trench gate on the surface of the semiconductor layer and has impurity concentration higher than that of the semiconductor layer. Further, the semiconductor device manufacturing method comprises a step of simultaneously oxidizing the surface of the n-type semiconductor region and the surface of the semiconductor layer to form an oxide film having a film thickness relatively thicker on the surface of the n-type semiconductor region than on the surface of the semiconductor layer. Further, the semiconductor device manufacturing method comprises a process of injecting a p-type impurity into the semiconductor layer by using the oxide film on the surface of the n-type semiconductor region as a mask to selectively form a p-type semiconductor region having a p-type impurity concentration higher than that of the semiconductor layer on the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |