| 发明名称 |
NON-SALICIDE POLYSILICON FUSE |
| 摘要 |
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.
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| 申请公布号 |
US2012257435(A1) |
申请公布日期 |
2012.10.11 |
| 申请号 |
US201113107441 |
申请日期 |
2011.05.13 |
| 申请人 |
LIN SUNG-CHIEH;YEN DAVID;CHIU IAN;HSU KUOYUAN (PETER);TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN SUNG-CHIEH;YEN DAVID;CHIU IAN;HSU KUOYUAN (PETER) |
| 分类号 |
G11C17/16;H01L21/768;H01L23/525 |
主分类号 |
G11C17/16 |
| 代理机构 |
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