发明名称 |
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANTATION SPECIES FOR A GIVEN GATE HEIGHT |
摘要 |
The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions.
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申请公布号 |
US2012256240(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201213524582 |
申请日期 |
2012.06.15 |
申请人 |
GRIEBENOW UWE;FROHBERG KAI;FEUSTEL FRANK;WERNER THOMAS;ADVANCED MICRO DEVICES, INC. |
发明人 |
GRIEBENOW UWE;FROHBERG KAI;FEUSTEL FRANK;WERNER THOMAS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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