发明名称 METHOD AND SYSTEM FOR POST-ETCH TREATMENT OF PATTERNED SUBSTRATE FEATURES
摘要 <p>A method of patterning a substrate, comprises providing a set of patterned features on the substrate exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.</p>
申请公布号 WO2012138707(A1) 申请公布日期 2012.10.11
申请号 WO2012US32091 申请日期 2012.04.04
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;GODET, LUDOVIC;HATEM, CHRISTOPHER, R.;MARTIN, PATRICK, M.;MILLER, TIMOTHY, J. 发明人 GODET, LUDOVIC;HATEM, CHRISTOPHER, R.;MARTIN, PATRICK, M.;MILLER, TIMOTHY, J.
分类号 H01L21/306;H01L21/3105;H01L21/311;H01L21/321;H01L21/3213 主分类号 H01L21/306
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