发明名称 MEMORY CIRCUIT, MEMORY UNIT, AND SIGNAL PROCESSING CIRCUIT
摘要 PURPOSE: A memory circuit, a memory device, and a signal processing circuit are provided to reduce power consumption by adopting a normally-off driving method. CONSTITUTION: An output terminal of a first operation circuit(221) is electrically connected to an input terminal of a second operation circuit(222). The input terminal of the second operation circuit is electrically connected to an output terminal of a third operation circuit through a switch(224). An output terminal of the second operation circuit is electrically connected to an input terminal of the first operation circuit. The input terminal of the first operation circuit is electrically connected to a source or drain of a transistor.
申请公布号 KR20120112125(A) 申请公布日期 2012.10.11
申请号 KR20120031554 申请日期 2012.03.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUROKAWA YOSHIYUKI
分类号 G11C7/10;G11C5/14;G11C7/22 主分类号 G11C7/10
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