NONVOLATILE STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile storage device of low drive voltage and less power consumption.

SOLUTION: A nonvolatile storage device 1 according to embodiments comprises: a word line wiring layer WL including a plurality of word lines extending in a first direction; a bit line wiring layer BL including a plurality of bit lines extending in a second direction crossing the first direction; pillars 16 arranged between each of the word lines and each of the bit lines; and charge containing members 18 each provided on a lateral face of the pillar 16 and containing a negative fixed charge. The pillar 16 includes a diode film 22 in which a p-type layer 22p and an n-type layer 22n are provided, and a resistance change film 25 laminated on the diode film 22. The charge containing member 18 is arranged on a lateral face of the p-type layer 22p but not arranged on a lateral face of the n-type layer 22n.

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