发明名称 |
COUPLINGS WITHIN MEMORY DEVICES |
摘要 |
A memory device includes a first bit line coupled to a first source/drain region of a first multiplexer gate, a second bit line coupled to a first source/drain region of a second multiplexer gate, and a sensing device having an input coupled to a second source/drain region of the first multiplexer gate and a second source/drain region of the second multiplexer gate. The input of the sensing device is formed at a vertical level that is different than a vertical level at which at least one of the first and second bit lines is formed.
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申请公布号 |
US2012258574(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201213495287 |
申请日期 |
2012.06.13 |
申请人 |
GODA AKIRA;ARITOME SEIICHI;MICRON TECHNOLOGY, INC. |
发明人 |
GODA AKIRA;ARITOME SEIICHI |
分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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