SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a semiconductor layer with a high impurity concentration therein and to provide a method of manufacturing a semiconductor device.

SOLUTION: A method of manufacturing a semiconductor device 20 comprises the steps of: forming trenches 33 in a semiconductor substrate 30 of a first conductivity type having a first impurity concentration N1; ion-injecting a first-conductivity-type impurity into the bottoms of the trenches 33; forming a semiconductor layer 35 having a second impurity concentration so as to fill the trenches 33; forming an impurity diffusion layer 36 having a third impurity concentration higher than the first impurity concentration in the semiconductor substrate 30 by heat treatment of the semiconductor substrate 30 in which the semiconductor layer 35 is buried in the trenches 33; forming a base layer 21 of a second conductivity type in a portion of the semiconductor substrate 30 at the semiconductor layer 35 side and forming an insulated gate field-effect transistor in the base layer 21; and removing the semiconductor substrate 30 until the impurity diffusion layer 36 is exposed at the opposite side of the semiconductor layer 35.

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