发明名称 |
SEMICONDUCTOR NANOWIRE STRUCTURE REUSING SUSPENSION PADS |
摘要 |
An integrated circuit apparatus is provided and includes first and second silicon-on-insulator (SOI) pads formed on an insulator substrate, each of the first and second SOI pads including an active area formed thereon, a nanowire suspended between the first and second SOI pads over the insulator substrate, one or more field effect transistors (FETs) operably disposed along the nanowire and a planar device operably disposed on at least one of the respective active areas formed on each of the first and second SOI pads.
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申请公布号 |
US2012256242(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201113080390 |
申请日期 |
2011.04.05 |
申请人 |
CHANG JOSEPHINE B.;GUILLORN MICHAEL A.;LAUER ISAAC;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;GUILLORN MICHAEL A.;LAUER ISAAC;SLEIGHT JEFFREY W. |
分类号 |
H01L27/12;B82Y40/00;B82Y99/00;H01L21/86 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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