发明名称 |
MEMORY CELL |
摘要 |
The invention relates, inter alia, to a memory cell (10) comprising at least one binary memory area for storing an item of bit information. According to the invention, it is provided that the memory area (SB) can optionally store holes or electrons and allows a recombination of holes and electrons, the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory area and a charge carrier injection device (PN) is present, by means of which optionally holes or electrons can be injected into the memory area (SB) and the bit information can thus be changed. |
申请公布号 |
WO2012136206(A2) |
申请公布日期 |
2012.10.11 |
申请号 |
WO2012DE200019 |
申请日期 |
2012.03.29 |
申请人 |
TECHNISCHE UNIVERSITAET BERLIN;MARENT, ANDREAS;BIMBERG, DIETER |
发明人 |
MARENT, ANDREAS;BIMBERG, DIETER |
分类号 |
H01L29/80;B82Y10/00;G11C16/04;H01L29/788 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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