发明名称 MEMORY CELL
摘要 The invention relates, inter alia, to a memory cell (10) comprising at least one binary memory area for storing an item of bit information. According to the invention, it is provided that the memory area (SB) can optionally store holes or electrons and allows a recombination of holes and electrons, the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory area and a charge carrier injection device (PN) is present, by means of which optionally holes or electrons can be injected into the memory area (SB) and the bit information can thus be changed.
申请公布号 WO2012136206(A2) 申请公布日期 2012.10.11
申请号 WO2012DE200019 申请日期 2012.03.29
申请人 TECHNISCHE UNIVERSITAET BERLIN;MARENT, ANDREAS;BIMBERG, DIETER 发明人 MARENT, ANDREAS;BIMBERG, DIETER
分类号 H01L29/80;B82Y10/00;G11C16/04;H01L29/788 主分类号 H01L29/80
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