发明名称 MEMORY BIT REDUNDANT VIAS
摘要 An integrated circuit containing a memory array with memory bits and a differential sense amplifier for reading the logic state of the memory bits. The integrated circuit also contains redundant vias which are in the via path that couples a bitline to Vss. Moreover, an integrated circuit containing a FLASH memory bit with redundant vias in the via path from the bitline to Vss.
申请公布号 US2012257441(A1) 申请公布日期 2012.10.11
申请号 US201213528528 申请日期 2012.06.20
申请人 DEXTER MARK A.;GUNTURI SARMA S.;TEXAS INSTRUMENTS INCORPORATED 发明人 DEXTER MARK A.;GUNTURI SARMA S.
分类号 G11C29/00;G11C11/00 主分类号 G11C29/00
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