发明名称 |
SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES |
摘要 |
Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.
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申请公布号 |
US2012256281(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201213430906 |
申请日期 |
2012.03.27 |
申请人 |
HARRER STEFAN;POLONSKY STANISLAV;KETCHEN MARK B.;OTT JOHN A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HARRER STEFAN;POLONSKY STANISLAV;KETCHEN MARK B.;OTT JOHN A. |
分类号 |
H01L29/66;B82Y99/00;H01L21/283 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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