| 发明名称 |
METHOD FOR DRYING THIN FILMS IN AN ENERGY EFFICIENT MANNER |
| 摘要 |
<p>A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.</p> |
| 申请公布号 |
CA2832543(A1) |
申请公布日期 |
2012.10.11 |
| 申请号 |
CA20122832543 |
申请日期 |
2012.03.28 |
| 申请人 |
NCC NANO, LLC |
发明人 |
SCHRODER, KURT A.;RAWSON, IAN M.;MCCOOL, STEVEN C.;EDD, ANDREW E.;DASS, RONALD I. |
| 分类号 |
H01S3/30 |
主分类号 |
H01S3/30 |
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