发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND REINFORCING PLATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a reinforcing plate, which can reinforce a semiconductor substrate in a thinning process of the semiconductor substrate or a process after thinning and acquire device characteristics while reinforcing the semiconductor substrate. <P>SOLUTION: According to one embodiment, in a semiconductor manufacturing method, a semiconductor substrate 11 is covered with an adhesive 42 to bond a reinforcing plate 30 such that first pads 16, 17, 18 overlap first through holes 31, 32, 33 one above the other. The semiconductor substrate 11 is removed from a second face 11b side up to a predetermined thickness and an electrode film 19 is formed after being subjected to predetermined processing. A removal liquid 43 of the adhesive 40 is injected into the first through holes 31, 32, 33 to expose the first pads 16, 17, 18. Probes 45, 46, 47 are made to contact with the first pads 16, 17, 18 through the first through holes 31, 32, 33 and a current between the probe 45 and the electrode film 19 is measured. A removal liquid 51 is injected into the first through holes 31, 32, 33 to separate the semiconductor substrate 11 and the reinforcing plate 30. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195539(A) 申请公布日期 2012.10.11
申请号 JP20110060275 申请日期 2011.03.18
申请人 TOSHIBA CORP 发明人 SHIBATA HIRONOBU
分类号 H01L21/66;H01L21/301;H01L21/304;H01L21/683;H01L29/41 主分类号 H01L21/66
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